Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.

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Abstract

A detailed study of the electronic properties of thin (< 20 nm)anodic TiO2 potentiostatically grown on titanium in two differentsolutions is presented. The results show that the nature of theanodizing solution affects the electronic properties of the anodicfilm and in particular the density of electronic state (DOS)distribution. Different DOS were derived from the experimentaldata analyzed according to the theory of amorphous semiconductor(a-SC) Schottky barrier. It is shown that the usual non-linear andfrequency dependent Mott-Schottky plots are in agreement withexpected theoretical behaviour of a-SC Schottky barrier. It isshown the importance of the DOS distribution in determining thefrequency response of the junction which is also related to theelectrical behaviour of anodic films as “thin” or “thick” in terms ofthe ratio between the space-charge region and oxide film thickness.
Lingua originaleEnglish
pagine (da-a)29-45
Numero di pagine17
RivistaECS Transactions
Volume75 (38) 29-45 (2017)
Stato di pubblicazionePublished - 2017

All Science Journal Classification (ASJC) codes

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