Character of the reaction between molecular hydrogen and a silicon dangling bond in amorphous SiO2

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Abstract

The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E′ centers with H2 leads to the conclusion that the bulk and surface E′ varieties are indistinguishable from their reaction properties with molecular hydrogen.
Lingua originaleEnglish
pagine (da-a)6663-6667
Numero di pagine5
RivistaJOURNAL OF PHYSICAL CHEMISTRY. C
Volume111
Stato di pubblicazionePublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Energy(all)

Cita questo

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title = "Character of the reaction between molecular hydrogen and a silicon dangling bond in amorphous SiO2",
abstract = "The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E′ centers with H2 leads to the conclusion that the bulk and surface E′ varieties are indistinguishable from their reaction properties with molecular hydrogen.",
author = "Marco Cannas and Fabrizio Messina",
year = "2007",
language = "English",
volume = "111",
pages = "6663--6667",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",

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TY - JOUR

T1 - Character of the reaction between molecular hydrogen and a silicon dangling bond in amorphous SiO2

AU - Cannas, Marco

AU - Messina, Fabrizio

PY - 2007

Y1 - 2007

N2 - The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E′ centers with H2 leads to the conclusion that the bulk and surface E′ varieties are indistinguishable from their reaction properties with molecular hydrogen.

AB - The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E′ centers with H2 leads to the conclusion that the bulk and surface E′ varieties are indistinguishable from their reaction properties with molecular hydrogen.

UR - http://hdl.handle.net/10447/26376

M3 - Article

VL - 111

SP - 6663

EP - 6667

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

ER -