Changes of electronic noise induced by oscillating fields in bulk GaAs semiconductors

Dominique Persano Adorno, Michelangelo Zarcone, D. Persano Adorno, Capizzo, Michelangelo Zarcone

Risultato della ricerca: Articlepeer review

7 Citazioni (Scopus)

Abstract

A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed cyclostationary electric fields is presented. The noise properties are investigated by computing the spectral density of velocity fluctuations. An analysis of the noise features as a function of the amplitudes and frequencies of two applied fields is presented. Numerical results show that it is possible to reduce the intrinsic noise. The best conditions to realize this effect are discussed.
Lingua originaleEnglish
pagine (da-a)L11-L22
Numero di pagine12
RivistaFluctuation and Noise Letters
Volume8
Stato di pubblicazionePublished - 2008

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.3100.3100???

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