"Chalcogenide thin films for direct resistors fabrication and trimming"

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The fabrication of thin film resistors based on Ge-Sb-Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.
Lingua originaleEnglish
pagine (da-a)337-341
RivistaMaterials Science in Semiconductor Processing
Volume7, Issues 4-6, 2004
Stato di pubblicazionePublished - 2004

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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