The fabrication of thin film resistors based on Ge-Sb-Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.
|Rivista||Materials Science in Semiconductor Processing|
|Stato di pubblicazione||Published - 2004|
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