Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

Isodiana Crupi, Calogero D. Presti, Angelo Piana, Pier Giorgio Fallica, Priolo, Alessia Irrera, Isodiana Crupi, Delfo Sanfilippo, Fabio Iacona, Franzò, Gianfranco Di Stefano

Risultato della ricerca: Article

31 Citazioni (Scopus)

Abstract

The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.
Lingua originaleEnglish
Numero di pagine4
RivistaPHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Volume73
Stato di pubblicazionePublished - 2006

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nanoclusters
erbium
quantum efficiency
quenching
luminescence
carrier injection
silicon
injection
ions
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cita questo

Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices. / Crupi, Isodiana; Presti, Calogero D.; Piana, Angelo; Fallica, Pier Giorgio; Priolo; Irrera, Alessia; Crupi, Isodiana; Sanfilippo, Delfo; Iacona, Fabio; Franzò; Di Stefano, Gianfranco.

In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, Vol. 73, 2006.

Risultato della ricerca: Article

Crupi, I, Presti, CD, Piana, A, Fallica, PG, Priolo, Irrera, A, Crupi, I, Sanfilippo, D, Iacona, F, Franzò & Di Stefano, G 2006, 'Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices', PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 73.
Crupi, Isodiana ; Presti, Calogero D. ; Piana, Angelo ; Fallica, Pier Giorgio ; Priolo ; Irrera, Alessia ; Crupi, Isodiana ; Sanfilippo, Delfo ; Iacona, Fabio ; Franzò ; Di Stefano, Gianfranco. / Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices. In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. 2006 ; Vol. 73.
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abstract = "The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. {\circledC} 2006 The American Physical Society.",
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TY - JOUR

T1 - Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

AU - Crupi, Isodiana

AU - Presti, Calogero D.

AU - Piana, Angelo

AU - Fallica, Pier Giorgio

AU - Priolo, null

AU - Irrera, Alessia

AU - Crupi, Isodiana

AU - Sanfilippo, Delfo

AU - Iacona, Fabio

AU - Franzò, null

AU - Di Stefano, Gianfranco

PY - 2006

Y1 - 2006

N2 - The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.

AB - The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.

UR - http://hdl.handle.net/10447/179540

UR - http://oai.aps.org/oai?verb=GetRecord&Identifier=oai:aps.org:PhysRevB.73.113302&metadataPrefix=oai_apsmeta_2

M3 - Article

VL - 73

JO - PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS

JF - PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS

SN - 1098-0121

ER -