Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

Isodiana Crupi, Calogero D. Presti, Angelo Piana, Pier Giorgio Fallica, Priolo, Fallica, Alessia Irrera, Isodiana Crupi, Delfo Sanfilippo, Fabio Iacona, Franzò, Gianfranco Di Stefano

Risultato della ricerca: Articlepeer review

32 Citazioni (Scopus)

Abstract

The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.
Lingua originaleEnglish
Numero di pagine4
RivistaPHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Volume73
Stato di pubblicazionePublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Entra nei temi di ricerca di 'Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices'. Insieme formano una fingerprint unica.

Cita questo