Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Mauro Mosca, Simeonov, Castiglia, Zhu, Bühlmann, Nicolas Grandjean, Mauro Mosca, Carlin, Butt́, Eric Feltin, Antonino Francesco Castiglia

Risultato della ricerca: Article

48 Citazioni (Scopus)

Abstract

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.
Lingua originaleEnglish
pagine (da-a)061106-1-061106-3
Numero di pagine3
RivistaApplied Physics Letters
Volume90
Stato di pubblicazionePublished - 2007

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cita questo

Mosca, M., Simeonov, Castiglia, Zhu, Bühlmann, Grandjean, N., Mosca, M., Carlin, Butt́, Feltin, E., & Castiglia, A. F. (2007). Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells. Applied Physics Letters, 90, 061106-1-061106-3.