Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Mauro Mosca, Antonino Francesco Castiglia, Bühlmann, Nicolas Grandjean, Mauro Mosca, Carlin, Butt́, Eric Feltin, Simeonov, Castiglia, Zhu

Risultato della ricerca: Article

46 Citazioni (Scopus)

Abstract

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.
Lingua originaleEnglish
pagine (da-a)061106-1-061106-3
Numero di pagine3
RivistaApplied Physics Letters
Volume90
Stato di pubblicazionePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cita questo

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells. / Mosca, Mauro; Castiglia, Antonino Francesco; Bühlmann; Grandjean, Nicolas; Mosca, Mauro; Carlin; Butt́; Feltin, Eric; Simeonov; Castiglia; Zhu.

In: Applied Physics Letters, Vol. 90, 2007, pag. 061106-1-061106-3.

Risultato della ricerca: Article

Mosca, M, Castiglia, AF, Bühlmann, Grandjean, N, Mosca, M, Carlin, Butt́, Feltin, E, Simeonov, Castiglia & Zhu 2007, 'Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells', Applied Physics Letters, vol. 90, pagg. 061106-1-061106-3.
Mosca, Mauro ; Castiglia, Antonino Francesco ; Bühlmann ; Grandjean, Nicolas ; Mosca, Mauro ; Carlin ; Butt́ ; Feltin, Eric ; Simeonov ; Castiglia ; Zhu. / Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells. In: Applied Physics Letters. 2007 ; Vol. 90. pagg. 061106-1-061106-3.
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abstract = "The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.",
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AU - Mosca, Mauro

AU - Castiglia, Antonino Francesco

AU - Bühlmann, null

AU - Grandjean, Nicolas

AU - Mosca, Mauro

AU - Carlin, null

AU - Butt́, null

AU - Feltin, Eric

AU - Simeonov, null

AU - Castiglia, null

AU - Zhu, null

PY - 2007

Y1 - 2007

N2 - The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.

AB - The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.

UR - http://hdl.handle.net/10447/19209

M3 - Article

VL - 90

SP - 061106-1-061106-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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