Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Marco Cannas, Giannazzo, Iucolano, Cora, Monia Spera, Roccaforte, Pécz, Greco, Alberti

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2 Citazioni (Scopus)

Abstract

In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Phi(B)) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Lingua originaleEnglish
pagine (da-a)164-170
Numero di pagine7
RivistaMaterials Science in Semiconductor Processing
Volume94
Stato di pubblicazionePublished - 2019

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cita questo

Cannas, M., Giannazzo, Iucolano, Cora, Spera, M., Roccaforte, Pécz, Greco, & Alberti (2019). Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. Materials Science in Semiconductor Processing, 94, 164-170.