Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Marco Cannas, Giannazzo, Iucolano, Cora, Monia Spera, Roccaforte, Pécz, Greco, Alberti

Risultato della ricerca: Article

2 Citazioni (Scopus)

Abstract

In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ_B) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Lingua originaleEnglish
pagine (da-a)164-170
Numero di pagine7
RivistaMaterials Science in Semiconductor Processing
Volume94
Stato di pubblicazionePublished - 2019

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Gallium nitride
Epilayers
gallium nitrides
Schottky diodes
Surface properties
Diodes
inhomogeneity
Microstructure
Temperature
gallium nitride
temperature dependence
microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cita questo

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. / Cannas, Marco; Giannazzo; Iucolano; Cora; Spera, Monia; Roccaforte; Pécz; Greco; Alberti.

In: Materials Science in Semiconductor Processing, Vol. 94, 2019, pag. 164-170.

Risultato della ricerca: Article

Cannas, M, Giannazzo, Iucolano, Cora, Spera, M, Roccaforte, Pécz, Greco & Alberti 2019, 'Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride', Materials Science in Semiconductor Processing, vol. 94, pagg. 164-170.
Cannas, Marco ; Giannazzo ; Iucolano ; Cora ; Spera, Monia ; Roccaforte ; Pécz ; Greco ; Alberti. / Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 94. pagg. 164-170.
@article{636dc1afbbae430a88a8400d8e31dbed,
title = "Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride",
abstract = "In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ_B) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.",
keywords = "Barrier spatial inhomogeneity, Electrical mesurements, Free standing GaN, Ni/GaN interface, Schottky barrier",
author = "Marco Cannas and Giannazzo and Iucolano and Cora and Monia Spera and Roccaforte and P{\'e}cz and Greco and Alberti",
year = "2019",
language = "English",
volume = "94",
pages = "164--170",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

AU - Cannas, Marco

AU - Giannazzo, null

AU - Iucolano, null

AU - Cora, null

AU - Spera, Monia

AU - Roccaforte, null

AU - Pécz, null

AU - Greco, null

AU - Alberti, null

PY - 2019

Y1 - 2019

N2 - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ_B) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

AB - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ_B) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

KW - Barrier spatial inhomogeneity

KW - Electrical mesurements

KW - Free standing GaN

KW - Ni/GaN interface

KW - Schottky barrier

UR - http://hdl.handle.net/10447/350356

M3 - Article

VL - 94

SP - 164

EP - 170

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -