Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors

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Abstract

Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.
Lingua originaleEnglish
pagine (da-a)P7-P9
Numero di pagine3
RivistaECS Solid State Letters
Volume3
Stato di pubblicazionePublished - 2014

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.2200.2208???

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