Abstract
Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.
Lingua originale | English |
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pagine (da-a) | P7-P9 |
Numero di pagine | 3 |
Rivista | ECS Solid State Letters |
Volume | 3 |
Stato di pubblicazione | Published - 2014 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.2500.2504???
- ???subjectarea.asjc.2200.2208???