Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors

Claudio Cali'; Francesco Di Franco; Roberto Macaluso; Mauro Mosca; Monica Santamaria; Francesco Di Quarto; Fulvio Caruso

Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors

Claudio Cali', Francesco Di Franco, Roberto Macaluso, Mauro Mosca, Monica Santamaria, Francesco Di Quarto, Fulvio Caruso

Ingegneria

Risultato della ricerca: Article › peer review

10 Citazioni (Scopus)

Abstract

Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.

Lingua originale	English
pagine (da-a)	P7-P9
Numero di pagine	3
Rivista	ECS Solid State Letters
Volume	3
Stato di pubblicazione	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{589924c87fe343c98794ac2cf4a844c3,

title = "Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors",

abstract = "Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.",

author = "Claudio Cali' and {Di Franco}, Francesco and Roberto Macaluso and Mauro Mosca and Monica Santamaria and {Di Quarto}, Francesco and Fulvio Caruso",

year = "2014",

language = "English",

volume = "3",

pages = "P7--P9",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

}

TY - JOUR

T1 - Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors

AU - Cali', Claudio

AU - Di Franco, Francesco

AU - Macaluso, Roberto

AU - Mosca, Mauro

AU - Santamaria, Monica

AU - Di Quarto, Francesco

AU - Caruso, Fulvio

PY - 2014

Y1 - 2014

N2 - Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.

AB - Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.

UR - http://hdl.handle.net/10447/89588

UR - http://ssl.ecsdl.org/content/3/1/P7.full.pdf+html?sid=f321bcc0-80c8-440f-80f6-4a15087d0e5c

M3 - Article

VL - 3

SP - P7-P9

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

ER -