Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization ofa Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristicsshowed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in thetriode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of thedevices.
|Numero di pagine||3|
|Rivista||ECS Solid State Letters|
|Stato di pubblicazione||Published - 2014|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering