Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5

La Mantia, F

Risultato della ricerca: Chapter

Lingua originaleEnglish
Titolo della pubblicazione ospitePassivation of Metals and Semiconductors, and Properties of Thin Oxide Layers
Pagine343-348
Numero di pagine6
Volume2006
Stato di pubblicazionePublished - 2006

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cita questo

La Mantia, F (2006). Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers (Vol. 2006, pagg. 343-348)

Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. / La Mantia, F.

Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Vol. 2006 2006. pag. 343-348.

Risultato della ricerca: Chapter

La Mantia, F 2006, Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. in Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. vol. 2006, pagg. 343-348.
La Mantia, F. Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Vol. 2006. 2006. pag. 343-348
La Mantia, F. / Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Vol. 2006 2006. pagg. 343-348
@inbook{2073dd5fe0754db8bebae64cbb4e9da0,
title = "Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5",
author = "{La Mantia, F} and {Di Quarto}, Francesco and Monica Santamaria",
year = "2006",
language = "English",
isbn = "978-0-444-52224-5",
volume = "2006",
pages = "343--348",
booktitle = "Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers",

}

TY - CHAP

T1 - Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5

AU - La Mantia, F

AU - Di Quarto, Francesco

AU - Santamaria, Monica

PY - 2006

Y1 - 2006

UR - http://hdl.handle.net/10447/27078

M3 - Chapter

SN - 978-0-444-52224-5

VL - 2006

SP - 343

EP - 348

BT - Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers

ER -