Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5

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Lingua originaleEnglish
Titolo della pubblicazione ospitePassivation of Metals and Semiconductors, and Properties of Thin Oxide Layers
Pagine343-348
Numero di pagine6
Stato di pubblicazionePublished - 2006

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

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@inbook{2073dd5fe0754db8bebae64cbb4e9da0,
title = "Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5",
author = "{Di Quarto}, Francesco and Monica Santamaria",
year = "2006",
language = "English",
isbn = "978-0-444-52224-5",
pages = "343--348",
booktitle = "Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers",

}

TY - CHAP

T1 - Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5

AU - Di Quarto, Francesco

AU - Santamaria, Monica

PY - 2006

Y1 - 2006

UR - http://hdl.handle.net/10447/27078

M3 - Chapter

SN - 978-0-444-52224-5

SP - 343

EP - 348

BT - Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers

ER -