| Lingua originale | English |
|---|---|
| Titolo della pubblicazione ospite | Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers |
| Pagine | 343-348 |
| Numero di pagine | 6 |
| Stato di pubblicazione | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
Cita questo
Di Quarto, F., & Santamaria, M. (2006). Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers (pagg. 343-348)
Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. / Di Quarto, Francesco; Santamaria, Monica.
Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. 2006. pag. 343-348.Risultato della ricerca: Chapter
Di Quarto, F & Santamaria, M 2006, Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. in Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. pagg. 343-348.
Di Quarto F, Santamaria M. Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. 2006. pag. 343-348
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