| Lingua originale | English |
|---|---|
| Titolo della pubblicazione ospite | Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers |
| Pagine | 343-348 |
| Numero di pagine | 6 |
| Volume | 2006 |
| Stato di pubblicazione | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
Cita questo
La Mantia, F (2006). Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers (Vol. 2006, pagg. 343-348)
Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Vol. 2006 2006. pag. 343-348.
Risultato della ricerca: Chapter
La Mantia, F 2006, Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. in Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. vol. 2006, pagg. 343-348.
La Mantia, F. Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5. In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers. Vol. 2006. 2006. pag. 343-348
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