In this paper, a preliminary PCB board for the electromagnetic interference (EMI) characterization of innovative silicon-carbide (SiC) based switching devices is presented. Packaging technological issues can determine hurdles in the high-frequency switching and high power regime where wide band gap semiconductors are intended today for Electric Vehicle (EV) applications. In particular, the parasitic inductances that emerge in such devices, must be assessed, by using e.g. EMI techniques. In this specific case, the EMI characterization is supposed to be carried out in a semianechoic chamber, available at the University of Palermo (UNIPA), to assess the electromagnetic disturbances according to the levels of compliance indicated by the standards. The proposed prototype can work properly at the following levels of voltage, frequency and load power: 28.5 V, 2 MHz and 40 W. Details concerning the layout design and the prototype manufacturing are discussed.
|Titolo della pubblicazione ospite||A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices|
|Numero di pagine||5|
|Stato di pubblicazione||Published - 2020|
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