Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

Fabio Principato; Calogero Pace; Salvatore A. Lombardo; Domenico Corso; Michael Lisiansky; Yakov Roizin; Sebania Libertino; Paolo Finocchiaro; Felix Palumbo

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

Fabio Principato, Calogero Pace, Salvatore A. Lombardo, Domenico Corso, Michael Lisiansky, Yakov Roizin, Sebania Libertino, Paolo Finocchiaro, Felix Palumbo

Fisica e Chimica - Emilio Segrè

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed andnonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k~2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence,once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiationtolerance of NROM memory arrays.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	PP
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation",

abstract = "Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed andnonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k~2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence,once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiationtolerance of NROM memory arrays.",

keywords = "Flash memories, nitride read-only memories (NROMs), oxide–nitride–oxide (ONO), radiation hardness., Flash memories, nitride read-only memories (NROMs), oxide–nitride–oxide (ONO), radiation hardness.",

author = "Fabio Principato and Calogero Pace and Lombardo, {Salvatore A.} and Domenico Corso and Michael Lisiansky and Yakov Roizin and Sebania Libertino and Paolo Finocchiaro and Felix Palumbo",

year = "2012",

language = "English",

volume = "PP",

pages = "1--6",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

AU - Principato, Fabio

AU - Pace, Calogero

AU - Lombardo, Salvatore A.

AU - Corso, Domenico

AU - Lisiansky, Michael

AU - Roizin, Yakov

AU - Libertino, Sebania

AU - Finocchiaro, Paolo

AU - Palumbo, Felix

PY - 2012

Y1 - 2012

N2 - Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed andnonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k~2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence,once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiationtolerance of NROM memory arrays.

AB - Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed andnonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k~2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence,once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiationtolerance of NROM memory arrays.

KW - Flash memories

KW - nitride read-only memories (NROMs)

KW - oxide–nitride–oxide (ONO)

KW - radiation hardness.

KW - Flash memories

KW - nitride read-only memories (NROMs)

KW - oxide–nitride–oxide (ONO)

KW - radiation hardness.

UR - http://hdl.handle.net/10447/64266

UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6287009&isnumber=4358746

M3 - Article

SN - 0018-9383

VL - PP

SP - 1

EP - 6

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

Abstract

All Science Journal Classification (ASJC) codes

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