Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

Fabio Principato, Calogero Pace, Salvatore A. Lombardo, Domenico Corso, Michael Lisiansky, Yakov Roizin, Sebania Libertino, Paolo Finocchiaro, Felix Palumbo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Threshold voltage (Vth) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed andnonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k~2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence,once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiationtolerance of NROM memory arrays.
Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalIEEE Transactions on Electron Devices
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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