The ″Livio Scarsi″ X-ray Facility at University of Palermo for device testing

Giuseppe Raso, Fabio Principato, Leonardo Abbene, Gaetano Gerardi, Accursio Antonio Turturici, Turturici, Pintacuda, Principato, Quartararo, Raso, Gerardi, Michele Quartararo

Research output: Contribution to conferenceOtherpeer-review

4 Citations (Scopus)


In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also available. Total ionizing dose (TID) tests on rad-hard power MOSFET transistors by using both X rays and 60Co gamma rays are presented. The aim of this work is to open up to potential users for low energy X-ray applications
Original languageEnglish
Number of pages0
Publication statusPublished - 2015

All Science Journal Classification (ASJC) codes

  • Radiation
  • Electrical and Electronic Engineering


Dive into the research topics of 'The ″Livio Scarsi″ X-ray Facility at University of Palermo for device testing'. Together they form a unique fingerprint.

Cite this