The amorphous semiconductor Schottky barrier approach to study the electronic properties of anodic films on Ti

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.
Original languageEnglish
Pages (from-to)C516-C525
Number of pages10
JournalJournal of the Electrochemical Society
Volume164
Publication statusPublished - 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'The amorphous semiconductor Schottky barrier approach to study the electronic properties of anodic films on Ti'. Together they form a unique fingerprint.

Cite this