Simulation of parasitic effects on silicon carbide devices for automotive electric traction

Filippo Pellitteri, Alessandro Busacca, Massimo Caruso, Rosario Miceli, Salvatore Stivala, Alessandra Raffa, Vincenzo Vinciguerra, Angelo Alberto Messina

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simulation on a typical switching circuit and power losses are compared as well. Experimental results concerning a SiC-based circuit are shown and investigated in a preliminary printed circuit board (PCB).
Original languageEnglish
Title of host publication2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive, AEIT AUTOMOTIVE 2020
Number of pages6
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Automotive Engineering
  • Electrical and Electronic Engineering

Cite this