Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes

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Abstract

The generation of non-bridging oxygen hole center („Si–O) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different c- and b-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
Original languageEnglish
Pages (from-to)586-589
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume353
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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