Optical Properties and Photosensitivity of Vacuum Synthesized Ge-doped Sol-Gel Amorphous SiO2

Simonpietro Agnello, Roberto Boscaino, Magistris, Stefania Grandi

Research output: Contribution to conferenceOtherpeer-review

Abstract

We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
Original languageEnglish
Pages422-426
Number of pages5
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • General Engineering

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