Nonstationary distributions and relaxation times in a stochastic model of memristor

Davide Valenti, Angelo Carollo, Anna Kharcheva, Bernardo Spagnolo, Krichigin, Kharcheva, Agudov, Angelo Carollo, Mikhaylov, Spagnolo, Dubkov, Valenti, Safonov, Belov, Guseinov

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.
Original languageEnglish
Pages (from-to)024003-
Number of pages23
JournalJournal of Statistical Mechanics: Theory and Experiment
Volume2020
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Statistics and Probability
  • Statistics, Probability and Uncertainty

Fingerprint

Dive into the research topics of 'Nonstationary distributions and relaxation times in a stochastic model of memristor'. Together they form a unique fingerprint.

Cite this