Non-uniform doping concentration CIGS absorber profile for highefficiency solar cells

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Abstract

The quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se2 (CIGS) is nowadays commonly considered one of the most suitable materials to fabricate cost-effective and high-efficiency photovoltaic cells. Thanks to the optical and structural properties of the absorber layer and to the tunable bandgap, thin-film CIGS cells have reached efficiencies around 20%, not far from the maximum values of traditional crystalline silicon cells. This high efficiency, together with the conceivable low fabrication costs, makes CIGS cells a promising alternative to silicon technology for large-scale production. In order to further improve the cells performance, in a previous work we have already proposed a simple structure having a linear graded carrier concentration absorber profile, which allows to induce a quasi-electrical field directed towards the back-contact, like CIGS cells with a Ga back-graded profile. Thanks to the increase of Ec and Ev towards the backcontact, while keeping the energy gap constant along the depth, the generation process is even more efficient in our structure, thus improving cells performance (efficiency over 21%). Herein, we investigate on other non-uniform doping concentration profiles that can be technologically easily realised, still maintaining the already demonstrated high-efficiency values.
Original languageEnglish
Number of pages0
Publication statusPublished - 2016

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absorbers
solar cells
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photovoltaic cells
silicon
optical properties
fabrication
thin films

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@conference{4311935d112f4f2cb78e0304eec91ae9,
title = "Non-uniform doping concentration CIGS absorber profile for highefficiency solar cells",
abstract = "The quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se2 (CIGS) is nowadays commonly considered one of the most suitable materials to fabricate cost-effective and high-efficiency photovoltaic cells. Thanks to the optical and structural properties of the absorber layer and to the tunable bandgap, thin-film CIGS cells have reached efficiencies around 20{\%}, not far from the maximum values of traditional crystalline silicon cells. This high efficiency, together with the conceivable low fabrication costs, makes CIGS cells a promising alternative to silicon technology for large-scale production. In order to further improve the cells performance, in a previous work we have already proposed a simple structure having a linear graded carrier concentration absorber profile, which allows to induce a quasi-electrical field directed towards the back-contact, like CIGS cells with a Ga back-graded profile. Thanks to the increase of Ec and Ev towards the backcontact, while keeping the energy gap constant along the depth, the generation process is even more efficient in our structure, thus improving cells performance (efficiency over 21{\%}). Herein, we investigate on other non-uniform doping concentration profiles that can be technologically easily realised, still maintaining the already demonstrated high-efficiency values.",
author = "Gabriele Adamo and Cino, {Alfonso Carmelo} and Isodiana Crupi and Antonino Parisi and Riccardo Pernice and Fabio Cardona and Alessandro Busacca",
year = "2016",
language = "English",

}

TY - CONF

T1 - Non-uniform doping concentration CIGS absorber profile for highefficiency solar cells

AU - Adamo, Gabriele

AU - Cino, Alfonso Carmelo

AU - Crupi, Isodiana

AU - Parisi, Antonino

AU - Pernice, Riccardo

AU - Cardona, Fabio

AU - Busacca, Alessandro

PY - 2016

Y1 - 2016

N2 - The quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se2 (CIGS) is nowadays commonly considered one of the most suitable materials to fabricate cost-effective and high-efficiency photovoltaic cells. Thanks to the optical and structural properties of the absorber layer and to the tunable bandgap, thin-film CIGS cells have reached efficiencies around 20%, not far from the maximum values of traditional crystalline silicon cells. This high efficiency, together with the conceivable low fabrication costs, makes CIGS cells a promising alternative to silicon technology for large-scale production. In order to further improve the cells performance, in a previous work we have already proposed a simple structure having a linear graded carrier concentration absorber profile, which allows to induce a quasi-electrical field directed towards the back-contact, like CIGS cells with a Ga back-graded profile. Thanks to the increase of Ec and Ev towards the backcontact, while keeping the energy gap constant along the depth, the generation process is even more efficient in our structure, thus improving cells performance (efficiency over 21%). Herein, we investigate on other non-uniform doping concentration profiles that can be technologically easily realised, still maintaining the already demonstrated high-efficiency values.

AB - The quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se2 (CIGS) is nowadays commonly considered one of the most suitable materials to fabricate cost-effective and high-efficiency photovoltaic cells. Thanks to the optical and structural properties of the absorber layer and to the tunable bandgap, thin-film CIGS cells have reached efficiencies around 20%, not far from the maximum values of traditional crystalline silicon cells. This high efficiency, together with the conceivable low fabrication costs, makes CIGS cells a promising alternative to silicon technology for large-scale production. In order to further improve the cells performance, in a previous work we have already proposed a simple structure having a linear graded carrier concentration absorber profile, which allows to induce a quasi-electrical field directed towards the back-contact, like CIGS cells with a Ga back-graded profile. Thanks to the increase of Ec and Ev towards the backcontact, while keeping the energy gap constant along the depth, the generation process is even more efficient in our structure, thus improving cells performance (efficiency over 21%). Herein, we investigate on other non-uniform doping concentration profiles that can be technologically easily realised, still maintaining the already demonstrated high-efficiency values.

UR - http://hdl.handle.net/10447/223238

M3 - Other

ER -