### Abstract

Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaussian noise voltage signal. We have found that the memristor switches between the low resistance state and the high resistance state in a random telegraphic signal (RTS) mode. The effective potential profile of the memristor shows from two to three local minima and depends on the input noise parameters and the memristor operation. These observations indicate the multiplicative character of the noise on the dynamical behavior of the memristor, that is the noise perceived by the memristor depends on the state of the system and its electrical properties are influenced by the noise signal. The detected effects manifest the fundamental intrinsic properties of the memristor as a multistable nonlinear system.

Original language | English |
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Pages (from-to) | 124026- |

Number of pages | 14 |

Journal | Journal of Statistical Mechanics: Theory and Experiment |

Volume | 2019 |

Publication status | Published - 2019 |

### All Science Journal Classification (ASJC) codes

- Statistical and Nonlinear Physics
- Statistics and Probability
- Statistics, Probability and Uncertainty

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## Cite this

Carollo, A., Spagnolo, B., Sharkov, Antonov, I. N., Koryazhkina, Novikov, Tabakov, Vrzheshch, Carollo, A., Mikhaylov, Spagnolo, Dubkov, Gorshkov, O. N., Filatov, D. O., & Belov (2019). Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack.

*Journal of Statistical Mechanics: Theory and Experiment*,*2019*, 124026-.