By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
|Number of pages||6|
|Publication status||Published - 2002|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics