Nanocrystal MOS with silicon-rich oxide

Isodiana Crupi, Lombardo, Vulpio, Melanotte, Isodiana Crupi, Fazio, Rimini, Gerardi

Research output: Contribution to conferenceOtherpeer-review

Abstract

By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Original languageEnglish
Pages675-680
Number of pages6
Publication statusPublished - 2002

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics

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