Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

Isodiana Crupi, Lombardo, Nastasi, Marco Bileci, Vulpio, Isodiana Crupi, Renna, Ammendola, Giuseppe Nicotra, Gerardi

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.
Original languageEnglish
Pages (from-to)2075-2079
Number of pages5
JournalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B
Volume20
Publication statusPublished - 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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