We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density structures dedicated to intersubband devices in the 2-4 μm wavelength range.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)