Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures

Enrico Calandra, Alina Caddemi, Crupi, Donato

Research output: Contribution to conferenceOther

6 Citations (Scopus)


In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
Original languageEnglish
Publication statusPublished - 2004


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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