Memory effects in MOS capacitors with silicon rich oxide insulators

Isodiana Crupi, Privitera, Lombardo, Vulpio, Isodiana Crupi, Corrado Bongiorno, Fazio, Corrado Spinella, Gerardi, Liao

Research output: Contribution to conferenceOtherpeer-review

Abstract

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials were annealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxide-semiconductor (MOS) capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics and they have been studied as a function of bias.
Original languageEnglish
PagesA2911-A2916
Number of pages6
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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