Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

Fabio Principato, Calogero Pace, Salvatore Lombardo, Domenico Corso, Michael Lisiansky, Yakov Roizin, Sebania Libertino, Paolo Finocchiaro, Felix Palumbo

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Threshold voltage (Vth) and drain-source current (Ids) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation withphotons and ions. Vth loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ duringirradiation with photons and ions reveal a step-like increase of Ids with the total irradiation dose. A brief physical explanation is also provided.
Original languageEnglish
Pages (from-to)3016-3020
Number of pages5
JournalIEEE Transactions on Nuclear Science
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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