Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Riccardo Pernice, Marco Angelo Giambra, Enrico Calandra, Claudio Arnone, Salvatore Stivala, Pasquale Cusumano, Alessandro Busacca, Antonio Benfante, Wolfram H. P. Pernice, Wolfram H.P. Pernice, Romain Danneau, Maximillian Thurmer, Maximillian Thürmer, Christian Benz, Fan Wu, Marco A. Giambra, Geethu Balachandran, Jong-Hyun Ahn, Himadri Pandey, Min-Ho JangGeethu Balachandran, Muraleetharan Boopathi, Geethu Balachandran, Muraleetharan Boopathi, Himadri Pandey

Research output: Contribution to journalArticle

Abstract

In this work, we report on the design, fabrication and characterization of Metal-OxideGraphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancingthe device transconductance. The fabricated devices employ clamped metal contacts also for source anddrain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasiticresistance. Our experimental results demonstrate that MOGFETs with the proposed structure showimproved high frequency performance, in terms of maximum available gain and transition frequencyvalues, as a consequence of the higher equivalent transconductance obtained.
Original languageEnglish
Pages (from-to)964-968
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume7
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Pernice, R., Giambra, M. A., Calandra, E., Arnone, C., Stivala, S., Cusumano, P., Busacca, A., Benfante, A., Pernice, W. H. P., Pernice, W. H. P., Danneau, R., Thurmer, M., Thürmer, M., Benz, C., Wu, F., Giambra, M. A., Balachandran, G., Ahn, J-H., Pandey, H., ... Pandey, H. (2019). Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries. IEEE Journal of the Electron Devices Society, 7, 964-968.