Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E’Ge defects in Ge-doped silica

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Abstract

We present an experimental investigation on the Ge doping level dependence of the Electron ParamagneticResonance (EPR) signal spectral features of the Ge(1), Ge(2) and E'Ge defects induced in Ge doped silica. Wehave studied samples produced by sol–gel or PCVD techniques and doped with different amounts of Ge up to20% by weight. The samples were gamma or beta ray irradiated and successively they were thermally treatedto isolate the EPR signals of the different point defects. The data show that the EPR line shapes of the Ge(1) andthe Ge(2) centers are progressively modified for doping level higher than 1%, whereas the line shape of theE'Ge defect appears independent from the doping. Togetherwith the EPR investigation,we have also recordedRaman spectra of the investigated samples. The Ge doping induces detectable modifications of Raman lineswhen the doping level is higher than 1% by weight. Basing on these observations, the structural modificationsdetected by Raman spectroscopy are tentatively considered the origin of the changes in the EPR features.
Original languageEnglish
Pages (from-to)1900-1903
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume357
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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