How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

Isodiana Crupi, Lacaita, De Salvo, Gérard Ghibaudo, Lombardo, Mur, Perniola, Valentina Ancarani, Monzio Compagnoni, Monzio Compagnoni, Monzio Compagnoni, Corso, Gely, Mariolle, Toffoli, Mazen, Melanotte, Isodiana Crupi, Ammendola, BaldiBez, Semeria, Deleonibus, Ielmini, Giuseppe Nicotra, Rimini, Gerardi, Pananakakis, Puglisi, Baron, Spinelli, Wan, Van Der Jeugd

Research output: Contribution to conferenceOtherpeer-review

129 Citations (Scopus)

Abstract

For the first time, memory devices with optimized high density (2E12#/cm2) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.
Original languageEnglish
Pages597-600
Number of pages4
Publication statusPublished - 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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