Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

Research output: Contribution to conferenceOtherpeer-review

3 Citations (Scopus)

Abstract

The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Original languageEnglish
Pages1-6
Number of pages6
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Industrial and Manufacturing Engineering
  • Instrumentation

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