Film di ZnO drogati di tipo p per diffusione termica di atomi di fosforo da substrati di InP

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Abstract

[automatically translated] We report on p-type doping of ZnO films grown by pulsed-laser deposition on InP substrates. Electrical properties change of the films, from n-type to p-type, Has Been Observed postgrowth after annealing at 600 ° C for 1 h in air.
Original languageItalian
Number of pages0
Publication statusPublished - 2012

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