Fast, high-efficiency Germanium quantum dot photodetectors

Isodiana Crupi; Pei Liu; Salvatore Cosentino; null Cosentino; null Terrasi; Son T. Le; null Lee; null Zaslavsky; Maria Miritello; Isodiana Crupi; null Pacifici; null Paine; null Zaslavsky; null Mirabella

Fast, high-efficiency Germanium quantum dot photodetectors

Isodiana Crupi, Pei Liu, Salvatore Cosentino, Cosentino, Terrasi, Son T. Le, Lee, Zaslavsky, Maria Miritello, Isodiana Crupi, Pacifici, Paine, Zaslavsky, Mirabella

Ingegneria

Research output: Contribution to conference › Other › peer-review

2 Citations (Scopus)

Abstract

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

Original language	English
Pages	1-3
Number of pages	3
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@conference{5112fcd693e94054933d7070aed1e89e,

title = "Fast, high-efficiency Germanium quantum dot photodetectors",

abstract = "We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. {\textcopyright} 2012 IEEE.",

keywords = "Electrical and Electronic Engineering, Germanium, photodetector, quantum dots, Electrical and Electronic Engineering, Germanium, photodetector, quantum dots",

author = "Isodiana Crupi and Pei Liu and Salvatore Cosentino and Cosentino and Terrasi and Le, {Son T.} and Lee and Zaslavsky and Maria Miritello and Isodiana Crupi and Pacifici and Paine and Zaslavsky and Mirabella",

year = "2012",

language = "English",

pages = "1--3",

}

TY - CONF

T1 - Fast, high-efficiency Germanium quantum dot photodetectors

AU - Crupi, Isodiana

AU - Liu, Pei

AU - Cosentino, Salvatore

AU - Cosentino, null

AU - Terrasi, null

AU - Le, Son T.

AU - Lee, null

AU - Zaslavsky, null

AU - Miritello, Maria

AU - Crupi, Isodiana

AU - Pacifici, null

AU - Paine, null

AU - Zaslavsky, null

AU - Mirabella, null

PY - 2012

Y1 - 2012

N2 - We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

AB - We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

KW - Electrical and Electronic Engineering

KW - Germanium

KW - photodetector

KW - quantum dots

KW - Electrical and Electronic Engineering

KW - Germanium

KW - photodetector

KW - quantum dots

UR - http://hdl.handle.net/10447/179452

M3 - Other

SP - 1

EP - 3

ER -

Fast, high-efficiency Germanium quantum dot photodetectors

Abstract

All Science Journal Classification (ASJC) codes

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