External noise effects on the electron velocity fluctuations in semiconductors

Bernardo Spagnolo, Dominique Persano Adorno, Nicola Pizzolato, Pizzolato, Persano Adorno, Spagnolo

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We investigate the modification of the intrinsic carrier noise spectraldensity induced in low-doped semiconductor materials by an external correlatednoise source added to the driving high-frequency periodic electricfield. A Monte Carlo approach is adopted to numerically solve the transportequation by considering all the possible scattering phenomena of thehot electrons in the medium. We show that the noise spectra are stronglyaffected by the intensity and the correlation time of the external randomelectric field. Moreover, this random field can cause a suppression of thetotal noise power.
Original languageEnglish
Pages (from-to)985-988
Number of pages4
JournalActa Physica Polonica A
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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