Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

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Abstract

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.
Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalIEEE Photonics Journal
Volume10
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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