Effect of high-k materials in the control dielectric stack of nanocrystal memories

Isodiana Crupi, Spitale, De Salvo, Lombardo, Deleruyelle, Lombardo, Corso, Gely, Buffet, Isodiana Crupi, Giuseppe Nicotra, Gerardi

Research output: Contribution to conferenceOtherpeer-review

4 Citations (Scopus)

Abstract

In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Original languageEnglish
Pages161-164
Number of pages4
Publication statusPublished - 2004

All Science Journal Classification (ASJC) codes

  • General Engineering

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