Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Marco Cannas; null Giannazzo; null Iucolano; null Cora; Monia Spera; null Roccaforte; null Pécz; null Greco; null Alberti

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Marco Cannas, Giannazzo, Iucolano, Cora, Monia Spera, Roccaforte, Pécz, Greco, Alberti

Fisica e Chimica - Emilio Segrè

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Phi(B)) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

Original language	English
Pages (from-to)	164-170
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	94
Publication status	Published - 2019

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride",

abstract = "In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Phi(B)) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.",

keywords = "Barrier spatial inhomogeneity, Free standing GaN, Ni/GaN interface, Schottky barrier, Barrier spatial inhomogeneity, Free standing GaN, Ni/GaN interface, Schottky barrier",

author = "Marco Cannas and Giannazzo and Iucolano and Cora and Monia Spera and Roccaforte and P{\'e}cz and Greco and Alberti",

year = "2019",

language = "English",

volume = "94",

pages = "164--170",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

AU - Cannas, Marco

AU - Giannazzo, null

AU - Iucolano, null

AU - Cora, null

AU - Spera, Monia

AU - Roccaforte, null

AU - Pécz, null

AU - Greco, null

AU - Alberti, null

PY - 2019

Y1 - 2019

N2 - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Phi(B)) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

AB - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Phi(B)) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

KW - Barrier spatial inhomogeneity

KW - Free standing GaN

KW - Ni/GaN interface

KW - Schottky barrier

KW - Barrier spatial inhomogeneity

KW - Free standing GaN

KW - Ni/GaN interface

KW - Schottky barrier

UR - http://hdl.handle.net/10447/350356

M3 - Article

SN - 1369-8001

VL - 94

SP - 164

EP - 170

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Abstract

All Science Journal Classification (ASJC) codes

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