Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

Leonardo Abbene, Fabio Principato, Saverio Altieri, Francesco Pintacuda

Research output: Contribution to journalArticlepeer-review

Abstract

Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTswere conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy)nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 powertransistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fastneutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB)failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did notinduce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing atChipIr with ultra-fast neutrons (1-800 MeV) were evaluated in terms of failure in time (FIT) versusderating voltage curves according to the JEP151 procedure of the Joint Electron Device EngineeringCouncil (JEDEC). These curves, even if scaled with die size and avalanche voltage, were stronglylinked to the technological processes of the devices, although a common trend was observed thathighlighted commonalities among the failures of different types of MOSFETs. In both experiments,we observed only SEB failures without single-event gate rupture (SEGR) during the tests. None ofthe power devices that survived the neutron tests were degraded in their electrical performances.A study of the worst-case bias condition (gate and/or drain) during irradiation was performed.
Original languageEnglish
Pages (from-to)1-15
Number of pages15
JournalSensors
Volume20
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

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