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Mauro Mosca

Associate Professor

 https://orcid.org/0000-0002-6612-1572
  • 976 Citations
  • 16 h-Index
19992020

Research output per year

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Research Output

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

Macaluso, R., Mosca, M., Petronijevic, E., Cesarini, G., Mattei, G., Leahu, G., Li Voti, R., Sibilia, C., Scian, C. & Cesca, T., 2020, In : Nanoscale. 12, p. 851-863 13 p.

Research output: Contribution to journal › Article

    • 1 Citation (Scopus)

    Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

    Lullo, G., Macaluso, R., Crupi, I., Mosca, M., Caruso, F., Caruso, F. & Feltin, E., 2019, In : IEEE Transactions on Electron Devices. 66, p. 4811-4816 6 p.

    Research output: Contribution to journal › Article

    • Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

    Mosca, M., Chernykh, Smirnov, Pearton, Lagov, Haller, C., Grandjean, Alexanyan, Pearton, Shchemerov, Shiko, Mosca, M., Carlin, Pavlov, Y. S., Polyakov & Butté, 2019, In : Journal of Applied Physics. 126, p. 125708-1-125708-8 8 p.

    Research output: Contribution to journal › Article

    • 1 Citation (Scopus)

    InAlN underlayer for near ultraviolet InGaN based light emitting diodes

    Mosca, M., Haller, C., Grandjean, N., Erni, R., Rossell, M. D., Mosca, M. & Carlin, J-F., 2019, In : Applied Physics Express. 12, p. 034002-1-034002-4 4 p.

    Research output: Contribution to journal › Article

    • 8 Citations (Scopus)

    Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

    Mosca, M., Sohi, P., Grandjean, N., Chen, Y., Mosca, M. & Carlin, J-F., 2019, In : Semiconductor Science and Technology. 34, p. 015002- 7 p.

    Research output: Contribution to journal › Article

    • 3 Citations (Scopus)