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Mauro Mosca

Associate Professor

 https://orcid.org/0000-0002-6612-1572
  • 951 Citations
  • 16 h-Index
19992020
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  • 6 Similar Profiles
Light emitting diodes Engineering & Materials Science
light emitting diodes Physics & Astronomy
Oxides Chemical Compounds
fabrication Physics & Astronomy
quantum wells Physics & Astronomy
Memristors Engineering & Materials Science
pulsed laser deposition Physics & Astronomy
Indium Engineering & Materials Science

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Research Output 1999 2020

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

Macaluso, R. & Mosca, M., 2020, In : Nanoscale. 12, p. 851-863 13 p.

Research output: Contribution to journal › Article

Aluminum Oxide
Sapphire
Transition metals
Phase transitions
Metals

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

Lullo, G., Macaluso, R., Crupi, I., Mosca, M., Caruso, F., Caruso, F. & Feltin, E., 2019, In : IEEE Transactions on Electron Devices. 66, p. 4811-4816 6 p.

Research output: Contribution to journal › Article

Light emitting diodes
Electrodes
Nanorods
Seed
Heterojunctions

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Mosca, M., Chernykh, Smirnov, Lagov, Haller, C., Grandjean, Alexanyan, Pearton, Shchemerov, Shiko, Mosca, M., Carlin, Pavlov, Y. S., Polyakov & Butté, 2019, In : Journal of Applied Physics. 126, p. 125708-1-125708-8 8 p.

Research output: Contribution to journal › Article

light emitting diodes
traps
quantum wells
electroluminescence
irradiation

InAlN underlayer for near ultraviolet InGaN based light emitting diodes

Mosca, M., Haller, C., Grandjean, N., Erni, R., Rossell, M. D., Mosca, M. & Carlin, J-F., 2019, In : Applied Physics Express. 12, p. 034002-1-034002-4 4 p.

Research output: Contribution to journal › Article

Light emitting diodes
light emitting diodes
ultraviolet radiation
Quantum efficiency
Semiconductor quantum wells

Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Mosca, M., Sohi, P., Grandjean, N., Chen, Y., Mosca, M. & Carlin, J-F., 2019, In : Semiconductor Science and Technology. 34, p. 015002- 7 p.

Research output: Contribution to journal › Article

Tunnel junctions
Metallorganic chemical vapor deposition
Growth temperature
tunnel junctions
metalorganic chemical vapor deposition